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国际整流器公司 (ＩＲ)推出新型温度传感功率ＭＯＳＦＥＴ ,借助内置的温度传感二极管 ,为汽车及各种高温应用系统提供妥善保护 ,成本效益极佳。全新的ＩＲＬＢＤ59Ｎ0 4Ｅ是一种 4 0Ｖ、2 0ｍΩ的Ｎ沟道ＭＯＳＦＥＴ ,通过两个反并联绝缘多硅二极管来感应温度。当ＭＯＳＦＥＴ
International Rectifier (IR) introduces a new temperature-sensing power MOSFET that offers excellent cost-effectiveness with built-in temperature sensing diodes for proper protection of automotive and high temperature applications. The new IRLBD59N0 4E is a 40V, 20mΩ N-channel MOSFET that senses temperature through two anti-parallel insulated polysilicon diodes. When the MOSFET