报道了一种新型的具有ＩｎＧａＡｓ量子阱结构有源区的垂直腔面发射激光器．采用钨丝作为掩膜，通过两次垂直交叉Ｈ＋质子轰击工艺制备器件，初步实现了室温脉冲工作，最低阈值电流达２０ｍＡ，激射波长为９１５ｎｍ，器件的串联电阻最低达１２０Ω A new vertical cavity surface emitting laser with active region of InGaAs quantum well structure is reported. Using tungsten wire as a mask, the device was fabricated by two vertical cross H + proton bombardment techniques. The pulse at room temperature was initially achieved. The minimum threshold current was 20mA, the lasing wavelength was 915nm, and the device’s series resistance was as low as 120Ω