由吉林大学电子科学系杜国同教授、张晓波副教授等人承担的国家高技术计划“七五”课题(307—02—04)“780nm可见光半导体激光器”于1992年底获国家发明三等奖,最近颁发了证书和奖章。“七五”期间,杜国同教授等人立足我国工艺条件,开展可见光半导体激光器的研制,在对国外已有器件结构优缺点的详细分析和大量实验的基础上,设计和研制了一种“阶梯衬底内条形”新型结构可见光半导体激光器。这种结构突破了国外已有的制造器件条形电极的工艺,外延前衬底蚀刻出适当的形状,巧妙地利用非平面衬底液相外延的性质,使内电流通路在外延过程中自然形成,从而省掉了外延后淀积掩膜、光刻、扩散(或二次外延)等制造条形电极(或内电流通路)工 The National Hi-Tech Plan “Seventy-five ” Project (307-02-04) “780nm Visible Laser Diode ” by the Department of Electronic Science of Jilin University, Professor Du Guotong and Associate Professor Zhang Xiaobo, won the third prize of national invention at the end of 1992 , Recently issued a certificate and medal. During the “75” period, Professor Du Guotong and others set foot on the technological conditions of our country to develop the visible light semiconductor laser. Based on the detailed analysis and large amount of experiments on the advantages and disadvantages of the existing foreign device structures, “Stepped substrate strip” new structure visible light semiconductor laser. This structure has broken through the existing manufacturing process of the strip electrode in the foreign countries. The epitaxial front substrate is etched into a proper shape, and the liquid phase epitaxy of the non-planar substrate is ingeniously utilized so that the inner current path naturally forms during the epitaxial process , Thus eliminating the need for epitaxial deposition mask, photolithography, diffusion (or secondary epitaxy) and other manufacturing strip electrode (or internal current path)