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以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。微观模拟与宏观建模相结合,着重介绍了如何用蒙特卡罗方法和Matlab相结合对上述各种物理现象进行数值模拟,同时对单电子晶体管进行宏观电路等效,用一些常用元器件进行宏观建模。采用强大的模拟集成电路软件Hspice进行分析模拟,大大减少了计算及仿真时间。通过分析比较,两者曲线得到了较好的吻合,直观地反映了单电子晶体管的电学特性,为进一步研究复杂系统提供了理论依据。
Taking a single electron transistor as the research object, the mechanism of the physical phenomena such as Coulomb blockage, coulomb steps and single electron tunneling is systematically described. The combination of microcosmic simulation and macroscopic modeling focuses on how to use Monte Carlo method combined with Matlab to simulate the various physical phenomena mentioned above. At the same time, macroscopical circuit is equivalent to single-electron transistor, macroscopic Modeling. The use of powerful analog integrated circuit software Hspice analysis and simulation, greatly reducing the calculation and simulation time. Through the analysis and comparison, the curves of the two are well matched, which directly reflects the electrical characteristics of the single electron transistor, which provides a theoretical basis for further research on complex systems.