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通常引起场效应晶体管(MOSFET)失效的主要原因是漏极-源极之间的电压(UDS)过高。电感负载的通断可使得场效应晶体管的UDS超过击穿电压。为保护大功率场效应晶体管,必须采取保护措施。保护场效应晶体管的措施很多,这例采用TVS保护是将TVS并联于D-S极之间。接线时,切忌极性接错(见图1所示)。
A common cause of field-effect transistor (MOSFET) failure is the excess drain-source voltage (UDS). The on-off of the inductive load allows the UDS of the field effect transistor to exceed the breakdown voltage. In order to protect the high-power field-effect transistor, protective measures must be taken. There are many measures to protect field effect transistors. In this case, TVS protection is used to connect TVS in parallel between D-S poles. Wiring, avoid wrong polarity (see Figure 1).