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从理论上分析了 a- Si∶ H薄膜晶体管 ( TFT)有源层—— a- Si∶H薄膜的光电特性、厚度及淀积均匀性、稳定性、重复性对 TFT工作性能的影响 .并根据此分析 ,在实验的基础上对a- Si∶ H淀积工艺进行了优化 ,找到了最佳淀积工艺 ,并介绍了淀积室电极结构 .用此工艺 ,作者在美制备出高质量的 640× 480象素的 a- Si∶ H薄膜晶体管 -有源矩阵液晶显示器 ( TFT-AMLCD) ,其对比度为 1 0 0∶ 1 ,灰度 2 4级 ,开口率大于 50 % ,开关比大于 1× 1 0 7.
The influence of photoelectric property, thickness, deposition uniformity, stability and repeatability on active power of a-Si: H thin film transistor (a-Si: H) Based on this analysis, the a-Si: H deposition process was optimized on the basis of experiments, the best deposition process was found, and the electrode structure of the deposition chamber was introduced.With this process, the author prepared a high quality A-Si: H thin-film transistor-active matrix liquid crystal display (TFT-AMLCD) with 640 × 480 pixels, contrast ratio of 1 0 0: 1, grayscale level 24, aperture ratio greater than 50%, switching ratio greater than 1 × 1 0 7.