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用光电发射的方法研究了碱金属Na和碱土金属Mg对Ge／GaAs（100）异质结形成及能带偏离的影响。实验结果表明，Na和Mg的薄夹层可使Ge／GaAs（100）的价带偏离分别增加0．19和0．18eV。通过Na，Mg和Al夹层的对比研究，可认为金属夹层对异质结能带偏离的影响与金属的电负性及其与衬底的相互作用有关。
The influence of alkali metal Na and alkaline earth metal Mg on the formation of Ge / GaAs (100) heterojunction and band deviation was investigated by photoemission. The experimental results show that the thin interlayer of Na and Mg can increase the valence band gap of Ge / GaAs (100) by 0.19 and 0.18eV, respectively. Through the comparative study of Na, Mg and Al interlayers, it can be considered that the influence of metal interlayers on the band offset of the heterojunction is related to the electronegativity of the metal and its interaction with the substrate.