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对一系列δ掺杂浅受主铍(Be)原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光(PL)研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品,并在每量子阱中央进行了Be原子的δ掺杂,量子阱宽度为30到200.在4.2 K温度下测量了上述系列样品的光致发光谱,清楚地观察到了束缚激子的受主从基态1s3/2(Γ6)到第一激发态2s3/2(Γ6)的两空穴跃迁.应用变分原理,计算了量子限制Be受主从2s到1s跃迁能量随量子阱宽度的变化关系.研究发现受主跃迁能量随量子阱宽度的变窄而增加,并且实验结果和理论计算符合较好.
Photoluminescence (PL) studies of energy transitions between a series of δ-doped GaAs / AlAs multiple quantum wells in shallow beryllium (Be) atoms and Be atoms in GaAs bulk materials uniformly doped in Be acceptor. The samples used in this experiment are uniformly doped Be acceptor GaAs epilayers and a series of GaAs / AlAs MQW grown by molecular beam epitaxy, and δ-doping Be atoms in the center of each quantum well With a quantum well width of 30 to 200. The photoluminescence spectrum of the above series of samples was measured at a temperature of 4.2 K and it was clearly observed that the acceptor of the bound exciton changed from the ground state of 1s3 / 2 (Γ6) to the first excited state of 2s3 / 2 (Γ6). The variation of the energy of the quantum confinement Be acceptor from 2s to 1s with the quantum well width was calculated by using the variational principle. It is found that the energy of the acceptor transition decreases with the narrowing of the width of the quantum well Increase, and the experimental results and theoretical calculations in line with the better.