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采用Ti/Al/Ni/Au多层金属体系在Al0.27Ga0.73N/GaN异质结构上制备了欧姆接触.分别采用线性传输线方法(LTLM)和圆形传输线方法(CTLM)对其电阻率进行了测试.当Ti(10nm)/Al(100nm)/Ni(40nm)/Au(100nm)金属体系在650℃高纯N2气氛中退火30s时,测量得到的最小比接触电阻率为1.46×10-5Ω.cm2.并制备了Al0.27Ga0.73N/GaN光导型紫外探测器,通过测试发现探测器的暗电流-电压曲线呈线性分布.实验结果表明在Al0.27Ga0.73N/GaN异质结构上获得了好的欧姆接触,能够满足制备高性能AlGaN/GaN紫外探测器的要求.
The ohmic contact was fabricated on the Al0.27Ga0.73N / GaN heterostructure by using Ti / Al / Ni / Au multilayered metal system. The resistivity of the Al0.27Ga0.73N / GaN heterostructure was measured by using the linear transmission line method (LTLM) and the circular transmission line method The minimum specific electrical contact resistance measured when Ti (10nm) / Al (100nm) / Ni (40nm) / Au (100nm) metal was annealed in 650 ℃ high purity N2 atmosphere was 1.46 × 10- 5Ω.cm2. And prepared Al0.27Ga0.73N / GaN photoconductive UV detector, the detector was found by the dark current-voltage curve was linear distribution.The experimental results show that in Al0.27Ga0.73N / GaN heterostructure Obtained a good ohmic contact, to meet the preparation of high-performance AlGaN / GaN UV detector requirements.