从低效走向高效--城市存量街区更新实践探索

来源 :2016中国城市规划年会 | 被引量 : 0次 | 上传用户：fymgxlj

【摘要】

：

【作者】

：

李晨左进

【机构】

：

天津愿景城市开发与设计策划有限公司

【出处】

：

2016中国城市规划年会

【发表日期】

：

2016年6期

【关键词】

：

城市更新存量街区制度设计房屋产权交易成本

下载到本地 , 更方便阅读

下载此文赞助VIP

声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架

论文部分内容阅读

当前中国经济进入新常态时期,一线城市中,深圳上海已经率先在总体规划中明确“建设用地零增长甚至负增长”,当前城市建设已经逐渐从增量空间扩张阶段走向存量提升的优化阶段.传统城市规划物质更新方式已很难应对城市存量街区所面临的产权、使用效率、制度等一系列复杂问题.现有制度给土地用途转变与房屋产权变更带来了巨额的交易成本,导致土地长期锁定在低效率使用者手中.本文通过持续跟踪研究厦门沙坡尾和天津小白楼五号地项目,提出当前城市存量小区更新的核心难点在于房屋产权复杂、交易成本高昂,探讨如何通过有效的制度设计降低交易成本,将资源从低效率的所有人转移到高效率的所有人,探索城市存量街区更新的新思路.

其他文献

Comparison of Photoluminescence Quantum Yield of Single Gold Nano-Bipyramids and Gold Nanorods

Fluorescent gold nanoparticles with high quantum yield are highly desirable for optical imaging in the fields of biology and materials science.We investigate the one-photon photoluminescence(PL)proper

会议

gold nano-bipyramidsgold nanorodsphotolumincencesurface plasmon resonancequa

The study of high quantum efficiency gold nano thin films as photoelectron emitter

In order to obtain stable large-area and uniform distribution surface electron source,quartz coated Au nano thin film as the core photoemission device is used and the quantum efficiency of the gold na

会议

UltravioletQuantum efficiencyGold nano thin filmPhotoelectron

Asymmetry optoelectronic response based on Composition-Graded Semiconductor Nanoribbon waveguides

In this work,an asymmetry waveguide photoconductivity is demonstrated for composition-graded CdS1-xSex nanobelt[1].Via changing the excitation position from the wide-bandgap(CdS0.95Se0.5)to the narrow

会议

CdS1-xSex nanobeltwaveguidephotoconductivityasymmetry optical-electric charac

Inkjet-Printing Short-Channel Polymer Transistors with High-Performance and Ultrahigh Photoresponsiv

Inkjet printing,in the past decade,has proved to be a powerful tool in the cost-effective ambient deposition of electrodes,organic semiconductors,and plastic dielectric layers.With this patterning met

会议

inkjet-printingshort-channel transistorslithography-freephotodetectors

Crystal Structure-Dependent Electromechanical Properties of InAs Nanowires

As an important Ⅲ–Ⅴ group semiconducting nanomaterial,InAs nanowires(NWs)have been reported to show great potential in ultrahigh frequency electronic nanodevices and high-performance near-infrared opt

会议

In-situ SEMelectromechanical propertypiezoelectric effectpiezoresistive effec

Controllable Transformation of Plasmonic Cu1.8S Nanocrystals and Their Structure-Property Correlatio

Due to the localized surface plasmon resonances(LSPR)arising from copper deficiency,colloidal Cu2-xS(0≤x≤1)nanocrystals exhibit two well-defined optical absorption band in both of the UV-visible(300-7

会议

Cu2-xS nanocrystalstransformationplasmonicsphotovoltaic

Non-and Low-Powered Flexible Smart Colorful Fibers Using Structural Colors and Electrochromic Materi

It is well-known that fibers have always been applied in the textile field and very closely related to peoples daily lives.As an indispensable feature,color is more and more important for extending ap

会议

Smart Colorful FibersStructural ColorsPhotonic CrystalElectrochromic Material

Electrical Characteristics of Ultrathin InAs Nanowires

InAs nanowires(NWs)are competitive candidates for high performance n-type devices owing to their high electron mobility,injection velocity and cylindrical geometry.However,their applications on integr

会议

ultrathin InAs nanowiresIon/Ioff ratioquantum confinements effectsmobilityco

Fabrication of 10 nm T-gates by a Double Patterning Process with Electron Beam Lithography and Dry E

Nanofabrication technique for 10 nm T gates in high electron mobility transistors(HEMTs)is the key to achieve THz speed in microwave/THz communications.Traditional fabrication process by electron beam

会议

10 nm T gatesHEMTselectron beam lithographyreactive ion etch

Intrinsic Magnetoresistance in Metal Films on Ferromagnetic Insulators

We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal/ferromagnetic insulator bilayers.It depends on the angle between current and magnetization directio

会议

spin orbit couplinginterfacemagnetoresistance

从低效走向高效--城市存量街区更新实践探索

与本文相关的学术论文