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As an important Ⅲ–Ⅴ group semiconducting nanomaterial,InAs nanowires(NWs)have been reported to show great potential in ultrahigh frequency electronic nanodevices and high-performance near-infrared optoelectronic nanodevices due to their high electron mobility and narrow direct bandgap.Recently,single-crystalline InAs NWs in pure wurtzite(WZ)structure have been successfully synthesized [1].The non-centrosymmetry of WZ structure and the narrow direct bandgap provide a possibility that InAs NW might be a promising material exhibiting the piezotronic effect in high frequency electronics and the piezo-phototronic effect in near infrared wavelength.