Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was depos......

用高频溅射法在P型硅衬底上生长了纳米硅薄膜,衬底温度控制在95℃左右,工作气体选用H2+Ar,氢气的分压控制在31%到70%,同时改变薄膜......