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采用自制掺摩尔分数12%的Y2O3的ZrO2混合颗粒料为原料,在不同的沉积温度下用电子束蒸发方法沉积氧化钇稳定氧化锆(YSZ)薄膜样品。利用ZYGOMarkⅢ-GPI数字波面干涉仪对氧化钇稳定氧化锆薄膜的残余应力进行了研究,讨论了沉积温度对残余应力的影响。实验结果表明:随沉积温度升高,氧化钇稳定氧化锆薄膜中残余应力状态由张应力变为压应力,且压应力值随着沉积温度升高而增大;用X射线衍射仪表征了不同沉积温度下氧化钇稳定氧化锆薄膜的微观结构,探讨了薄膜微观结构与其应力的对应关系,并对比了纯ZrO2薄膜表现出的应力状态。
Yttria-stabilized zirconia (YSZ) thin films were deposited by electron beam evaporation at different deposition temperatures using ZrO2 mixed particles of Y2O3 doped with 12% molar fraction. The residual stress of yttria-stabilized zirconia thin films was studied by using ZYGOMarkⅢ-GPI digital surface wave interferometer, and the effect of deposition temperature on residual stress was discussed. The experimental results show that the residual stress state changes from tensile stress to compressive stress and the compressive stress increases with the deposition temperature as the deposition temperature increases. The X-ray diffraction The microstructure of yttria-stabilized zirconia films at deposition temperature was discussed. The corresponding relationship between microstructure and stress was discussed. The stress state of pure ZrO2 thin films was also compared.