论文部分内容阅读
针对碳纳米管填充的硅通孔(TSV)的信号传输性能优化问题,提出一种新型的基于同轴型混合碳纳米管填充的硅通孔结构。在内外层管束交界处的耦合电容的基础上,提出新型TSV结构的可变参数等效电路模型,并基于TSV在三种不同应用层次上的尺寸参数,通过此电路模型分析新型TSV中的信号传输性能。分析结果表明,在0~40 GHz内与单一类型碳纳米管填充的TSV相比,所提出TSV结构具有更小的插入损耗与更短的上升时延,并随TSV的尺寸增大优势更加显著。最后,对所提出TSV结构进行时域眼图仿真,仿真结果表明其在高速集成电路中可以满足对信号完整性的要求。
In order to optimize the signal transmission performance of TSV filled with carbon nanotubes, a novel TSV structure filled with coaxial carbon nanotubes is proposed. Based on the coupling capacitance between the inner and outer tube bundles, a new parametric equivalent circuit model of the TSV structure is proposed. Based on the dimensional parameters of TSV at three different application levels, the signal of the new TSV Transmission performance. The results show that the proposed TSV structure has smaller insertion loss and shorter rise time delay than single-type carbon nanotube-filled TSVs at 0-40 GHz, and is more significant with the increase of TSV size . Finally, the time-domain eye simulation of the proposed TSV structure is performed, and the simulation results show that it meets the requirements for signal integrity in high-speed integrated circuits.