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本文描述双极场引晶体管(BiFET)及其理论.把两维晶体管分解成两个一维晶体管,得到解析方程.以表面势为参变量,采用电化(准费米)势梯度驱动力计算电流.提供实用电极直流电压及器件参数范围,随直流电压变化,输出和转移电流和电导.电子和空穴表面沟道同时存在,这新特点可以用来在单管实现CMOS电路倒相和SRAM存储电路.
This paper describes the theory of bipolar field-effect transistors (BiFETs) and its theory. By decomposing a two-dimensional transistor into two one-dimensional transistors, an analytical equation is obtained. Using the surface potential as a parameter, Provides practical electrode DC voltage and device parameter range, varies with DC voltage, outputs and transfers current and conductance. Both electron and hole surface channels exist simultaneously. This new feature can be used to invert the CMOS circuit and SRAM memory in a single tube Circuit.