采用射频等离子体增强化学气相沉积(radio frequency plasma enhanced chemical vapor deposition,RF-PECVD)技术在玻璃衬底上沉积了硼掺杂微晶硅薄膜。采用椭圆偏振光谱和Raman光谱分析了辉光功率和硼掺杂量对薄膜的晶化率、表面粗糙度、空隙率和非晶孵化层厚度的影响。结果表明:随着输入功率的增加,薄膜表面粗糙度的变化趋势为先缓慢减小、再快速增加、然后再次减小;沉积薄膜中的体层晶化率和空隙率的变化趋势相同,而空隙率与非晶孵化层厚度的变化趋势相反。随着初始硼掺量的增加,薄膜表面粗糙度的变化趋势为先缓慢增加、再减小、然后再增加;沉积薄膜的体层晶化率和空隙率并没有类似的对应关系。此外,对RF-PECVD沉积硼掺杂微晶硅的生长机理进行了分析。 Boron-doped microcrystalline silicon thin films were deposited on glass substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The effects of glow power and boron doping on the crystallization rate, surface roughness, porosity and thickness of amorphous layer were analyzed by ellipsometry and Raman spectroscopy. The results show that with the increase of input power, the surface roughness of film decreases slowly first, then increases rapidly and then decreases again. The change trend of volume crystallization rate and void ratio in the deposited film is the same, The voidage and the thickness of the amorphous hatch cover the opposite trend. With the increase of the initial boron content, the change trend of the surface roughness of the film first slowly increases, then decreases, and then increases; and there is no similar corresponding relationship between the volume fraction of the bulk layer and the deposition rate of the deposited film. In addition, the growth mechanism of boron-doped microcrystalline silicon deposited by RF-PECVD was analyzed.