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研究了7.5cm372×276象素a－SiTFT有源矩阵的优化设计理论，讨论了材料物理参数和器件结构参数时器件性能的影响，并对其制作工艺进行了系统研究。
The optimized design theory of 7.5cm 372 × 276 pixel a-SiTFT active matrix is studied. The influence of material physical parameters and device structure parameters on the performance of the device is studied, and its fabrication process is systematically studied.