适合在高温下工作的紧凑型太阳盲固态紫外光电探测器,无论在民间还是在政府部门,都有着广泛的需求。将Ⅲ-Ⅴ族氮化物用于光电探测器应用,预计可以使光电探测器在一个很宽的温度范围内工作,并具有低的暗电流和高的响应率。GaN和AlN的直接带隙分别为3.4eV和6.2eV,其相应的截止波长分别为365nm和 A compact solar-blind solid-state UV detector suitable for operation at high temperatures has a wide range of needs, both in the private and public sectors. The use of Group III-V nitrides for photodetector applications is expected to allow photodetectors to operate over a wide temperature range with low dark current and high responsivity. The direct band gaps of GaN and AlN are 3.4eV and 6.2eV, respectively, with corresponding cut-off wavelengths of 365nm and