1.前言由于单晶硅压阻传感器的高灵敏度,已经使其商品化了。但是,这些装置存在的一个问题是在高温下会发生泄漏。因此,它们的使用范围限制在150℃以下。泄漏发生在将电阻与基片相隔离的pn结处。如果将氧化物或氮化物作为绝缘材料,则不会出现泄漏问题。所以,常常使用多晶硅作为压阻材料。但多晶硅具有低灵敏度的缺点,并存在控制特性问题。 1. Introduction Due to the high sensitivity of single-crystal piezoresistive sensors, it has been commercialized. However, one of the problems with these devices is that leakage can occur at high temperatures. Therefore, their use is limited to below 150 ° C. Leakage occurs at the pn junction that isolates the resistor from the substrate. If oxide or nitride is used as an insulating material, there is no leakage problem. Therefore, polysilicon is often used as a piezoresistive material. However, polycrystalline silicon has the disadvantage of low sensitivity and has the problem of control characteristics.