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报道了SOI基亚微米小尺寸波导光栅器件的设计、制作与测试结果。提出了波导与光栅同步制作的方案,避免了套刻,节约了成本。实验中采用电子束光刻(EBL)、感应耦合等离子体(ICP)刻蚀等先进半导体工艺技术,结合图形补偿等技术手段,完成了亚微米波导光栅的制作。光栅周期为350nm,占空比16∶19。采用该光栅做反射镜,制作了法布里-珀罗(F-P)谐振腔,经测试得到了与模拟相吻合的结果,峰谷比达到11dB。
The design, fabrication and test results of SOI-based sub-micron small-size waveguide grating devices are reported. Proposed a waveguide and grating synchronous production program to avoid the overlay, saving costs. In the experiment, advanced semiconductor technology such as electron beam lithography (EBL), inductively coupled plasma (ICP) etching and other techniques were used to fabricate the submicron waveguide grating. The grating period is 350 nm with a duty cycle of 16:19. Fabry-Perot (F-P) resonator was fabricated by using the grating as a reflector. The results were consistent with the simulation. The peak to valley ratio was 11dB.