采用直接热蒸发CdS粉末的方法,在不同的生长条件下制备出CdS纳米线和纳米带材料并对其形貌、结构和光学性质进行了研究。CdS纳米线具有单晶结构,且生长方向具有择优取向,而其纳米带不具有上述结构特征。光致发光光谱研究发现,室温下纳米线只在508nm出现了CdS的本征发射带。然而,纳米带存在2个明显的发光峰,中心峰位分别位于513nm和756nm。这2个发射峰可分别指认为CdS的本征发射和Vs+空位引起的发射。 CdS nanowires and nanobelts were prepared under different growth conditions by direct thermal evaporation of CdS powders. The morphology, structure and optical properties of CdS nanowires were studied. The CdS nanowire has a single crystal structure with a preferred orientation in the growth direction, while the nanoribbon does not have the above structural features. Photoluminescence spectroscopy study found that nanowires at room temperature only appeared at 508nm CdS intrinsic emission band. However, there are two obvious luminescence peaks in the nanoribbons, with central peak positions at 513 nm and 756 nm, respectively. These two emission peaks can be respectively identified as the intrinsic emission of CdS and the emission caused by Vs + vacancies.