论文部分内容阅读
本文介绍堆积式列阵半导体激光器， 着重在ＧａＩｎＡｓＰ／ＩｎＰ 系列激光器。由于它们的Ｔ。小， 受环境温度影响大， 用一般结构制作列阵器件是很困难的。而采用大光腔结构的激光器， 它的Ｔ０ 值可达１００ ～１４０Ｋ， 单个１－３μｍ 激光器，脉冲峰值功率超过３ｗ （ 瓦）［ １］ ， 单个１－５５μｍ 激光器， 脉冲峰值功率超过２ Ｗ［ ２］ 。我们用它们的芯片研制堆积列阵激光器在研制中发现， 列阵的输出功率小于各单元器件输出功率之和； 而减小的比率随着单元数目增加而增加。我们制成３ ×４ 单元的１－３μｍ 列阵激光器， 其脉冲峰值功率大于２４ Ｗ； ４ ×４ 单元的１－５５μｍ 列阵激光器， 它的脉冲峰值功率大于２０ Ｗ。
This article describes the stacked array semiconductor lasers, focusing on GaInAsP / InP series lasers. Because of their t Small, affected by the temperature of the environment, with the general structure of the array device is very difficult. The use of a large optical cavity structure of the laser, its T0 value of up to 100 ~ 140K, a single 1-3μm laser pulse power of more than 3w (watts) [1], a single 1-55μm laser pulse peak power exceeds 2 W [ 2]. We developed stacked array lasers using their chips and found that the output power of the array is less than the sum of the output power of the individual devices; and the reduced ratio increases as the number of cells increases. We made a 3 × 4 cell 1-3μm array laser with a pulse peak power greater than 24 W and a 4 × 4 cell 1-55 μm array laser with a pulse peak power of more than 20 W.