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利用x射线光电子能谱的深度剖面技术,对不同衬底温度下分子束外延生长的Mn薄膜及其与GaAs(001)衬底间的界面进行了元素组分和化学结合状态随深度变化的研究。实验发现衬底温度等于400K时制备的fcc-Mn/GaAs(001)体系中,fcc-Mn层与GaAs衬底之间存在一层较厚的Mn-Ga-As的缓冲层;衬底温度等于300K(室温)时制备的a-Mn/GaAs(001)体系中也存在类似的缓冲层,但它的厚度与fcc-Mn的情形相比要小得多;而当衬底温度等于450K时制备的体系在GaAs衬底之上全部是Mn-Ga-As的合金,并不存在Mn占绝对优势的区域。结果表明生长中保持一定的衬底温度(约400K),以获得适当厚度的缓冲层,对于制备Fcc-Mn是一个必不可少的条件。
Using the depth profile technique of x-ray photoelectron spectroscopy, the study on the variation of elemental composition and chemical bonding with depth of Mn thin films epitaxially grown at different substrate temperatures and their interface with GaAs (001) substrates . It is found that a thick buffer layer of Mn-Ga-As exists between the fcc-Mn layer and the GaAs substrate in a fcc-Mn / GaAs (001) system prepared at a substrate temperature equal to 400K; the substrate temperature is equal to A similar buffer layer is also present in the a-Mn / GaAs (001) system prepared at 300 K (room temperature), but its thickness is much smaller compared to the case of fcc-Mn; when the substrate temperature is equal to 450 K, Of the system above the GaAs substrate is all Mn-Ga-As alloy, there is no absolute advantage of Mn region. The results show that maintaining a certain substrate temperature during growth (about 400K) to obtain the appropriate thickness of the buffer layer is an indispensable condition for preparing Fcc-Mn.