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利用 ＭＯＣＶＤ工艺可制备得到锐钛矿型ＴｉＯ２薄膜，在其上溅射金属 Ｐｔ并控制工艺流程的温度，Ｐｔ／ＴｉＯ２间将形成良好的金半整流接触．该Ｐｔ／ＴｉＯ２肖特基二极管在常温下表现出良好的气敏特性，响应时间短，对稳定环境中低分压气体浓度的变化反应灵敏．同时，该 Ｐｔ／ＴｉＯ２肖特基二极管还对约 ２５０－３７０ ｎｍ的紫外光敏感．本文研究了 Ｐｔ／ＴｉＯ２肖特基二极管气敏和光敏特性，分析了敏感机理．
The anatase TiO2 thin film can be prepared by MOCVD process, on which sputtered metal Pt and control the process temperature, Pt / TiO2 will form a good gold semi-rectification contact. The Pt / TiO2 Schottky diode exhibits good gas-sensing properties at room temperature with short response time and is sensitive to the changes of low partial pressure gas concentration in a stable environment. At the same time, the Pt / TiO2 Schottky diode is also sensitive to UV light at about 250-370 nm. In this paper, the gas sensing and photosensitizing properties of Pt / TiO2 Schottky diodes were studied, and the sensitive mechanism was analyzed.