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研究了含硅3.25%的铁硅单晶体,在加热到900℃经过35%轧制后的组织结构,和退火后的再结晶织构。观察到样品轧制后在厚度内的畸变程度是不均匀的。退火时在畸变较大的表面层中先发生再结晶,然后再结晶晶粒向着畸变较小的中心层生长。用金相和X射线技术研究后证明:在表面层中与再结晶织构取向相同的轧制织构已经存在,这时同位再结晶是形成再结晶织构的主耍原因;样品在高温退火后形成的再结晶织构,是由于表面层中已再结晶的晶粒向着中心层择优生长的结果。
The ferro-silicon single crystal containing 3.25% silicon, the microstructure after 35% rolling at 900 ° C, and the recrystallized texture after annealing were investigated. It was observed that the degree of distortion within the thickness after the sample was rolled was not uniform. During annealing, recrystallization occurs first in the distorted surface layer, and then the recrystallized grains grow toward the center layer with less distortion. Metallographic and X-ray studies have shown that the same rolling texture exists in the surface layer as the recrystallized textures, and that recrystallization at the same time is the main reason for the formation of recrystallized textures. The samples are annealed at high temperature The resulting recrystallized texture is due to the preferential growth of recrystallized grains in the surface layer toward the center layer.