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值得注意的是光伏探测器也可以由图1的等效电路来描述。它没有电流增益机理,因而G=1。探测器的电容为二极管结电容,这种电容实质上大于光导的电容。如果不受结的漏泄支配时,光电二极管的内阻就可利用结的伏安特性的关系,即R~(-1)=(?)I/(?)V,来导出光电二极管内阻的数量值。因此,为了确定其内阻,必需说明加到结上的偏压。为了确定最佳偏压,有几个因素必须加以考虑。
It is worth noting that the PV detector can also be described by the equivalent circuit of Figure 1. It has no current gain mechanism, so G = 1. The detector capacitance is the diode junction capacitance, which is substantially greater than the capacitance of the light guide. The internal resistance of the photodiode can be derived from the relationship between the volt-ampere characteristics of the junction, ie, R -1 () I / (V) V, Quantity value. Therefore, in order to determine its resistance, it is necessary to explain the bias applied to the junction. In order to determine the best bias, several factors must be considered.