用ＭＯＣＶＤ生长发射波长为８０８ｎｍ的ＡＬＧａＡｓ／ＧａＡｓ量子阱激光器材料。通过在激光器材料的波导中加入多量子势垒（ＭＱＢ）层，有效地限制电子在阱内的复合以及高能电子溢出阱外，从而降低了激光器的阈值电流，提高了它的特征温度。增加了ＭＱＢ后，器件的阈值电流密度Ｉ＿（ｔｈ）从原来的４００～６００Ａ／ｃｍ￣２下降到３００～４００Ａ／ｃｍ￣２，特征温度从１６０Ｋ提高到２１０Ｋ。 An ALGaAs / GaAs quantum well laser material with an emission wavelength of 808 nm was grown by MOCVD. By adding multiple quantum barrier (MQB) layers into the waveguides of laser materials, the confinement of electrons in the well and the overflow of high energy electrons are effectively restrained, which reduces the laser threshold current and enhances its characteristic temperature. After adding MQB, the threshold current densities of the devices are reduced from 400 ~ 600A / cm ~ 2 to 300 ~ 400A / cm ~ 2, and the characteristic temperature is increased from 160K to 210K.