论文部分内容阅读
使用高分辨像定量分析方法和像模拟技术，对外延生长的ＧａＡｓ／ＩｎｘＧａ１－ｘＡｓ应变层超晶格的微观组态进行了详细的分析。用像模拟验证了成像位置与结构投影的对应关系。使用像点定位及畸变测量的分析方法，获得了晶格畸变位移分布图及畸变沿生长方向的分布曲线，扣除由四方畸变导致的点阵膨胀与收缩，得到了仅由Ｉｎ元素分布导致的点阵参数变化曲线。由晶格参数与Ｉｎ元素含量的线性对应关系，获得了超晶格中Ｉｎ元素沿生长方向的分布曲线。
The microstructure of epitaxial GaAs / InxGa1-xAs strained superlattices has been analyzed in detail using high-resolution quantitative analysis and image simulation techniques. The corresponding relationship between the imaging position and the structure projection is verified by simulations. Using the method of image localization and distortion measurement, the distortion distribution and the distribution along the growth direction of the lattice were obtained, and the lattice expansion and contraction caused by the quadrilateral distortion were deducted. Matrix parameter curve. The distribution curve of In element in the superlattice along the growth direction was obtained from the linear relationship between lattice parameters and In element content.