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采用组合材料方法研究了金属Ni膜厚对Ni/SiC接触性质的影响.16个膜厚均为18nm的Ni/SiC电极具有较为一致的肖特基接触性质;膜厚从10nm增加到160nm,肖特基接触的电流-电压(I-V)曲线随膜厚发生显著变化.分析表明这种变化源于膜厚对理想因子n和有效势垒高度ФB的影响.1000℃快速退火后,这些肖特基接触都转变为欧姆接触,Ni2Si是主要的生成物.I-V曲线测试表明,Ni膜厚为30至70nm范围时能稳定得到性质较好的欧姆接触.证实了之前认为Ni/SiC高温退火后富碳层存在一个合适范围以形成良好欧姆接触的结论.
The effects of the Ni film thickness on the contact properties of Ni / SiC films were studied by using the composite material method. All the 16 Ni / SiC films with the same film thickness of 18 nm exhibited consistent Schottky contact properties. The film thickness increased from 10 nm to 160 nm, The current-voltage (IV) curve of the Te base contact varies significantly with film thickness, and the analysis shows that this variation results from the effect of film thickness on the ideality factor n and the effective barrier height Ф B. After rapid annealing at 1000 ° C, these Schottky Ni2Si is the main product.The IV curve test shows that the better ohmic contact can be obtained when Ni film thickness is in the range of 30 to 70nm.It was confirmed that the carbon The existence of a suitable range of layers to form a good ohmic contact conclusion.