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亚100纳米工艺下CMP在铜双大马士革工艺中导致的金属厚度偏离对互连线信号完整性具有严重影响。为实现90纳米工艺下互连线精确仿真,本文提出了一种新的互连线分析算法。该方法通过估计寄生参数分布的均值和方差,实现了金属厚度偏离对互连线性能影响的统计学分析。TCAD工艺仿真试验表明该方法可有效实现对90纳米工艺互连线的精确仿真。
The deviation of the metal thickness caused by CMP in the copper double damascene process under the sub-100-nm process has a serious impact on the signal integrity of the interconnects. In order to realize the accurate simulation of interconnects under the 90nm process, this paper presents a new interconnection analysis algorithm. By means of estimating the mean and variance of the distribution of parasitic parameters, the method achieves a statistical analysis of the influence of metal thickness deviations on the interconnection performance. TCAD process simulation shows that this method can effectively realize the 90-nanometer process interconnection line simulation.