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在 77到 2 92K的范围内 ,系统研究了含InAs自组装量子点的金属 半导体 金属双肖特基势垒二极管的输运特性 .随着温度上升 ,量子点的存储效应引起的电流回路逐渐减小 .在测试温度范围内 ,通过量子点的共振隧穿过程在电流 电压 (I V)曲线中造成台阶结构 ,且使电流回路随温度的上升急剧减小 .根据肖特基势垒的反向I V曲线 ,计算了势垒的反向饱和电流密度和平均理想因子 .发现共振随穿效应使肖特基势垒在更大的程度上偏离了理想情况 ,而量子点的电子存储效应主要改变了肖特基势垒的有效势垒高度 ,从而影响了势垒的反向饱和电流密度
In the range of 77 to 2 92K, the transport properties of metal-semiconductor double Schottky barrier diodes with InAs self-assembled quantum dots have been systematically studied. As the temperature rises, the current loop caused by the storage effect of quantum dots decreases In the test temperature range, the resonant tunneling process through the quantum dots creates a stepped structure in the current-voltage (IV) curve and drastically reduces the current loop with increasing temperature.According to the reverse IV of Schottky barrier Curve, the reverse saturation current density and the average ideal factor of the barrier are calculated. It is found that the Schottky barrier deviates from the ideal condition to a greater degree by the resonant wear-through effect, and the electron storage effect of the quantum dot mainly changes The effective barrier height of the Triterpene barrier affects the reverse saturation current density of the barrier