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采用Si C衬底0.25μm Al Ga N/Ga N高电子迁移率晶体管(HEMT)工艺,研制了一款X波段Ga N单片微波集成电路(MMIC)低噪声放大器(LNA)。放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪声系数;第三级采用电阻电容串联负反馈匹配,在尽量降低噪声系数的前提下,保证良好的增益平坦度、输出端口回波损耗以及输出功率。在片测试表明,在10 V漏级电压、-2 V栅极电压偏置下,放大器静态电流为60 m A,8~12 GHz内增益为22.5 d B,增益平坦度为±1.2 d B,输入输出回波损耗均优于-11 d B,噪声系数小于1.55 d B,1 d B增益压缩点输出功率大于11.9 d Bm,其芯片尺寸为2.2 mm×1.1 mm。装配测试表明,噪声系数典型值小于1.6 d B,可承受33 d Bm连续波输入功率。该X波段Ga N低噪声放大器与高功率放大器工艺兼容,可以实现多功能集成,具有广阔的工程应用前景。
An X-band Ga N monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) was developed using Si C substrate 0.25 μm AlGa N / Ga N high electron mobility transistor (HEMT) technology. The amplifier uses three cascade topology, the first stage of the source inductance matching, to ensure good input return loss while optimizing the amplifier noise figure; the third level resistor and capacitor series negative feedback matching, to minimize the noise figure premise , Ensure good gain flatness, output port return loss and output power. In-chip tests showed that the quiescent current of the amplifier was 60 m A at a drain voltage of 10 V and a bias voltage of -2 V, with a gain of 22.5 d B in 8 to 12 GHz and a gain flatness of ± 1.2 d B, The input and output return loss are better than -11 d B, the noise figure is less than 1.55 d B, and the gain of the 1 d B gain compression point is greater than 11.9 d Bm. The chip size is 2.2 mm × 1.1 mm. Assembly tests show that the typical noise figure is less than 1.6 d B and can withstand 33 d continuous wave Bm input power. The X-band Ga N low-noise amplifier is compatible with high-power amplifier technology and can realize multi-functional integration with a wide range of engineering application prospects.