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基于应变Si/(001)Si1-xGex材料价带E(k)-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/(001)Si1-xGex材料价带带边(重空穴带)、亚带边(轻空穴带)空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成果为Si基应变PMOS器件性能增强的研究及导电沟道的应力与晶向设计提供了重要理论依据.
Based on the E (k) -k relationship model of the valence band of strained Si / (001) Si1-xGex materials, the effective mass of holes along different crystal orientations was obtained. The results show that compared with the relaxed materials, the strain Si / ( 001) The valence band edge (heavy hole zone) and the sub-band edge (light hole zone) of Si1-xGex material change significantly in some k-directions and have more obvious anisotropy. Mass and mobility are closely related. The research results provide important theoretical basis for the research on the performance enhancement of Si-based strained PMOS devices and the design of the stress and orientation of conducting channels.