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基于水平热壁化学气相沉积(CVD)技术,采用原位刻蚀方法,在3英寸(1英寸=2.54 cm)(0001)Si面零偏4H-SiC衬底上生长了高质量的同质外延层,并对其主要工艺参数和生长机制进行了探讨。利用微分干涉相差显微镜、喇曼散射及湿法腐蚀等表征手法对样品进行了测试分析。测量结果表明,4H-SiC占整个外延表面积的99%以上,此外,该工艺消除了4H-SiC同质外延层中的基面位错,提高了外延层的质量。同时对零偏4H-SiC衬底的同质外延的工艺过程和理论进行了研究和讨论,实验发现,生长前的原位刻蚀、初始生长参数、碳硅原子比以及生长温度对于维持外延层晶型、避免3C-SiC多型的产生具有重要影响。
Based on horizontal hot-wall chemical vapor deposition (CVD) techniques, in-situ etching was used to grow high-quality homoepitaxial epitaxial growth on a 3-inch (1 inch = 2.54 cm) Layer, and its main process parameters and growth mechanism were discussed. The samples were analyzed by differential interference phase contrast microscopy, Raman scattering and wet etching. The measurement results show that 4H-SiC accounts for more than 99% of the total epitaxial surface area. In addition, the process eliminates basal plane dislocations in the 4H-SiC homoepitaxial layer and improves the quality of the epitaxial layer. At the same time, the process and theory of homoepitaxy of partial 4H-SiC substrate are studied and discussed. The results show that in-situ etching before growth, initial growth parameters, atomic ratio of carbon to silicon, Crystal form, to avoid 3C-SiC polytype has a major impact.