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通过对掩模衬底材料和掩模加工工艺利用硬性分界条件可满足45nm及以下技术节点的掩模要求。此外类似于折射指数、平整度、成分、均匀性和应力等衬底材料的固有特性严重地影响到掩模加工性能和光刻性能。评述了45nm及以下技术节点对空白材料,掩模及晶片层面的要求。指出了对于关键问题及出现的问题的可仿效实施的方法,最后研究了集成用于高效光掩模工厂的掩模材料的实际情况分析。
The masking requirements of 45 nm and below nodes can be met by using rigid boundary conditions on the mask substrate material and the mask processing technology. In addition, inherent properties of the substrate material, such as refractive index, flatness, composition, uniformity and stress, have a significant impact on mask processability and lithographic performance. The requirement of blank material, mask and wafer level for 45nm and below nodes is reviewed. The key issues and problems that can be followed in practice are pointed out. Finally, the actual situation analysis of the mask material integrated in the high-efficiency photomask factory is studied.