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高浓度离子注入砷隐埋层技术与扩散锑埋层技术相比，具有表面浓度高，硅表面无合金点等优点。应用该技术成功地研制了具有国际先进水平的“DYL多元逻辑八位高速机频D／A转换器”集成电路。
Compared with the technology of diffused antimony buried layer, the high concentration ion implanted arsenic buried layer has the advantages of high surface concentration and no alloy point on the silicon surface. Application of the technology successfully developed with the international advanced level of "DYL multivariate logic eight high-speed frequency D / A converter integrated circuits.