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本文分析了以正硅酸乙酯溶液为源，用等离子体增强化学汽相淀积法淀积的氧化硅膜的成分与电荷等特性，以及淀积和退火工艺条件对这些特性的影响。
In this paper, the composition and charge characteristics of silicon oxide films deposited by plasma enhanced chemical vapor deposition using ethyl orthosilicate as the source, and the effects of deposition and annealing conditions on these properties are analyzed.