论文部分内容阅读
本文采用真空瞬时蒸镀加氧化热处理方法在玻璃和硅衬底上生长出ＩＴＯ）铟锡氧化物薄膜。电阻率～１０￣（－２）Ωｃｍ，可见光区几乎透明，透射率达９４％（６３２８Ａ单色光源）。采用Ｘ光衍射和ＳＥＭ技术分析了氧化热处理前后薄膜中组份及微结构的变化。ＩＴＯ／ｐ－Ｓｉ异质结在日照下（ＡＭ１．５，１００ｍｗ／ｃｍ￣２）开路电压达１８０ｍｖ，该方法制各的ＩＴＯ膜可作为光电接收电极层有效地应用在各类光电器件上。
In this paper, instantaneous vacuum deposition and thermal oxidation of ITO thin films were grown on glass and silicon substrate. Resistivity ~ 10 ~ (-2) Ωcm, the visible light is almost transparent, the transmittance of 94% (6328A monochromatic light source). The changes of composition and microstructure of the films before and after oxidation heat treatment were analyzed by X-ray diffraction and SEM. ITO / p-Si heterojunction in the sunlight (AM1.5, 100mw / cm ~ 2) open circuit voltage of 180mv, the ITO film prepared by the method can be used as a photoelectric receiving electrode layer effectively applied to various types of photovoltaic devices.