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本文介绍了一种基于单根氧化锌纳米线场效应管的制备方法,用XRD和SEM分析了样品的结构和形貌,测试了它的输出特性曲线和转移特性曲线。当Vds=2 V时,测得场效应管的开启电压Vgt=-16.2 V;计算得到低频跨导gm=46.6nS。在Vgs=0 V时,测得一维ZnO纳米线的载流子浓度n=1.15×108cm-1,电子迁移率μe=14.4 cm2/Vs,电导率σ=0.26Ω-1cm-1。该场效应管的上限截止频率fH=1585 Hz,漏源极间电容C=25.4 pF。本文还对基于单根氧化锌纳米线的场效应管的光电灵敏度和光电时间响应进行了测试分析。
In this paper, a method for preparing a single ZnO nanowire FET was introduced. The structure and morphology of the samples were analyzed by XRD and SEM. The output characteristic curve and the transfer characteristic curve were tested. When Vds = 2 V, measured the MOSFET turn-on voltage Vgt = -16.2 V; calculated low-frequency transconductance gm = 46.6nS. When Vgs = 0 V, the one-dimensional ZnO nanowire carrier concentration n = 1.15 × 108cm-1, the electron mobility μe = 14.4 cm2 / Vs, the conductivity σ = 0.26Ω-1cm-1. The upper limit of the FET cut-off frequency fH = 1585 Hz, drain-source capacitance C = 25.4 pF. In this paper, we also test the photoelectric sensitivity and photoelectric time response of FETs based on single zinc oxide nanowires.