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采用反应射频磁控溅射方法,在经过不同方法处理的蓝宝石基片上,在同一条件下沉积了ZnO薄膜.利用原子力显微镜、X射线衍射、反射式高能电子衍射等分析技术,对基片和薄膜的结构、表面形貌进行了系统表征.研究结果显示,不同退火条件下的蓝宝石基片表面结构之间没有本质的差异,均为α-Al2O3(001)晶面,但基片表面形貌的变化较大.在不同方法处理的蓝宝石基片上生长的ZnO薄膜均具有高c轴取向的织构特征,但薄膜的表面形貌差异较大.基片经真空退火处理后,ZnO薄膜的生长形貌与基片未处理时十分类似,具有+c取向和-c取向两种外延岛特征;基片经氮气环境退火后,ZnO薄膜的生长形貌具有单一的-c取向外延岛特征,晶粒尺寸较大,但薄膜表面粗糙度没有明显改善;基片经氧气环境退火后,ZnO薄膜的生长形貌仍为-c取向外延岛特征,薄膜表面粗糙度显著降低.对于未处理、真空退火、氮气退火和氧气退火等方法处理的蓝宝石基片ZnO薄膜表面形貌的自仿射关联长度分别为619,840,882和500nm.
ZnO thin films were deposited under the same conditions on the sapphire substrates treated by different methods by reactive RF magnetron sputtering.Analytical techniques such as atomic force microscopy, X-ray diffraction and reflection high energy electron diffraction were used to study the effect of substrate and film The results show that there is no essential difference between the surface structures of sapphire substrates under different annealing conditions, which are all α-Al2O3 (001) crystal planes, but the topography of The ZnO films grown on the sapphire substrates processed by different methods all have high c-axis orientation texture features, but the surface morphology of the films is quite different.After vacuum annealing, the growth of ZnO thin films The morphology of the ZnO thin film is very similar to that of the uncoated substrate and has two epitaxial island features of + c orientation and -c orientation. The growth morphology of the ZnO thin film has a single-c orientation epitaxial island after the substrate is annealed in nitrogen atmosphere. But the surface roughness of the film is not significantly improved.The growth morphology of ZnO film is still-c-oriented epitaxial island after the oxygen annealing of the substrate, the surface roughness of the film is significantly reduced.For the untreated, ZnO thin self-affine correlation length of a sapphire substrate surface morphology air annealing, nitrogen annealing and oxygen annealing treatment methods such as 500nm and 619,840,882, respectively.