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研究了在大直径直拉硅单晶中掺氮 (N )对原生氧沉淀的影响 .通过高温一步退火 (10 5 0℃ )和低 -高温两步退火 (80 0℃ +10 5 0℃ )发现在掺 N直拉 (NCZ)硅中氧沉淀的行为与一般直拉 (CZ)硅是大不相同的 ,经过高温一步退火后 ,在氧化诱生层错环 (OSF- ring)区氧沉淀的量要小于空洞型缺陷 (voids)区 ,而经过低 -高温两步退火后 ,OSF-ring区的氧沉淀量要远远大于 voids区 .由此可得 ,在晶体生长过程中 ,N通过改变硅晶体中空位的浓度及其分布从而改变原生氧沉淀的尺寸和分布 .并在此基础上讨论了在大直径 NCZ硅中掺 N影响原生氧沉淀的机理 .
The effects of nitrogen (N) doping on the primary oxygen precipitation in a large-diameter Czochralski silicon single crystal were investigated by one-step annealing at high temperature (105 ° C) and annealing at low-high temperature (80 ° C + 105 ° C) It was found that the oxygen precipitation in N-doped CZ silicon is quite different from that of Czochralski (CZ) silicon. After one-step high-temperature annealing, oxygen precipitates in the oxide-induced layer (OSF-ring) The amount of oxygen deposition in the OSF-ring zone is much larger than that in the voids zone, which shows that during the crystal growth, N passes through Altering the concentration and distribution of vacancies in the silicon crystal to change the size and distribution of primary oxygen precipitates, and on the basis of which the mechanism of primary oxygen precipitation in NCZ silicon with large diameter was discussed.