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利用低压 -金属有机汽相外延 (L P- MOCVD)工艺首先在二氧化硅衬底上生长硫化锌 (Zn S)薄膜 ,然后 ,将硫化锌薄膜在氧气中于不同温度下进行热氧化 ,制备出高质量的纳米氧化锌 (Zn O )薄膜 .X射线衍射 (XRD)结果表明 ,氧化锌具有六角纤锌矿晶体结构 .90 0℃氧化样品的光致发光 (PL )谱中 ,在波长为 3.3e V处观察到一束强紫外光致发光和相当弱的深能级发射 .紫外发光强度与深能级发射强度之比是 80 ,表明纳米 Zn O薄膜的高质量结晶 .在受激发射实验中观察到紫外激光发射 .
First, a zinc sulfide (ZnS) thin film is grown on a silicon dioxide substrate by a low pressure-metal-organic vapor phase epitaxy (L P-MOCVD) process, and then the zinc sulfide thin film is thermally oxidized at different temperatures in oxygen to prepare High quality ZnO thin films were obtained by X-ray diffraction (XRD). The results showed that zinc oxide had a hexagonal wurtzite crystal structure.The photoluminescence (PL) A bundle of intense ultraviolet light emission and a relatively weak deep level emission was observed at 3.3e V. The ratio of ultraviolet light emission intensity to deep level emission intensity was 80, indicating high quality crystallization of the nanosized ZnO thin film.In stimulated emission In the experiment UV laser emission was observed.