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本文测量了电池表观禁带宽度E_g~(app)与缓冲层厚度的关系,研究表明,缓冲层能改善V_(oc)的原因是加宽了电池的表观带隙,降低反向饱和电流。它还能增强PI界面电场强度,减小该区及Ⅰ层内的复合。但碳的引入又会降低电池稳定性,为此需要兼顾电池性能与稳定性而优化选择缓冲层的厚度。
In this paper, the relationship between the apparent cell gap E_g ~ (app) and the thickness of the buffer layer was measured. The results show that the reason that the buffer layer can improve the V oc is to widen the apparent bandgap of the cell and reduce the reverse saturation current . It also enhances the electric field strength at the PI interface and reduces the recombination in this area and in layer I. However, the introduction of carbon reduces the stability of the battery. Therefore, it is necessary to optimize the thickness of the buffer layer in consideration of the battery performance and stability.