来自硅的雪崩载流子注入时ＭＮＯＳ结构介质膜中的荷电现象＝［刊．俄］／－１９９３．２２（２）．－３１～３７金属（或重掺杂半导体）－氮化硅－二氧化硅－硅（ＭＮＯＳ）结构，在现代微电子学中有着广泛的应用。显然，和热生长二氧化硅膜相比。上述双层电介质具有一系... Charged phenomenon of MNOS structure dielectric film when avalanche carriers from silicon are implanted. Russian] / - 1993.22 (2). -31 ~ 37 metal (or heavily doped semiconductor) - silicon nitride - silicon dioxide - silicon (MNOS) structure, has a wide range of applications in modern microelectronics. Obviously, compared to thermally grown silica membranes. The double-layer dielectric has a series of ...