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文中对直接和间接硅外延生长技术进行了讨论和比较。目前硅外延生长正处于探索阶段,在过去二年亦未采用新的炉子工艺。用低温沉积控制外延层掺杂梯度及外延层完整性方面已有改进。亦描述了外延层生长技术最近改进的情况。
In this paper, direct and indirect silicon epitaxial growth techniques were discussed and compared. The current silicon epitaxial growth is in the exploratory stage, in the past two years also did not use the new furnace technology. There have been improvements in the control of epitaxial layer doping gradients and the integrity of epitaxial layers by low-temperature deposition. The recent improvements in epitaxial layer growth techniques have also been described.