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研究了薄基区HBT合金温度对残余电压Voffset和欧姆接触电阻Rcontact的影响,给出了薄基区HBT的最佳合金温度区域.用肖特基钳位理论解释了合金温度过高导致Voffset偏大的现象.从晶体管基本物理机制推导出Voffset与集电极、发射极面积比Ac/Ae的关系,并用此解释了U形发射极HBT具有较小Ac/Ae的原因,进一步证明了U型发射极结构的优越性.
The influence of the temperature of HBT alloy on the residual voltage Voffset and the ohmic contact resistance Rcontact was studied, and the optimal alloy temperature region for HBT was given. The Schottky clamp theory was used to explain the effect of the alloy temperature on the Voffset bias Large phenomenon.The relationship between Voffset and the collector-emitter area ratio Ac / Ae is deduced from the basic physical mechanism of the transistor, and the reason why the U-shaped emitter HBT has a small Ac / Ae is explained, which further proves that the U-type emission The superior structure of the pole.