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一、半导体器件的简易检测 1.二极管用普通万用表×10或×100档量测正向电阻时,指针的偏转角度应超过刻度盘的中心线,偏转越多说明正向电阻值小,如果指针不过中心线,则说明该二极管的工作会不稳定。用高阻档测量反向电阻时,对于锗管应大于1兆欧,对于硅管应大于50兆欧。小于此值说明二极管高温特性差。 2.稳压管稳压值可用欧姆表进行检测,条件是欧姆表内部的电池电压E要高于被测稳压值Uz。测量方法是将黑表笔接稳压管的阴极,红表笔接阳极,把电阻刻度的“∞”边界线看作为100％,把“0”边界线看作为0％,整个刻度按均匀分度值读取m％数。
First, the simple detection of semiconductor devices 1. Diode with a regular multimeter × 10 or × 100 standard measuring forward resistance, the deflection angle of the pointer should be more than the center line of the dial, deflection more positive resistance value is small, if the pointer However, the center line, then the work of the diode will be unstable. When measuring the reverse resistance with a high blocking resistance, it should be greater than 1 megohm for a germanium tube and more than 50 megohm for a silicon tube. A value lower than this indicates that the diode has poor high-temperature characteristics. 2. Zener voltage regulator can be used to detect Ohm, the condition is the internal battery voltage ohm meter to be higher than the measured voltage Uz value. The measurement method is to connect the black pen to the cathode of the cathode tube, the red pen to the anode, the “∞” boundary line of the resistance scale as 100%, the “0” boundary line as 0%, and the entire scale as a uniform index Read m% number.