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W、Nb、Ta、Mo和V中痕量组分的分析是ICP技术的典型应用之一。由于这些元素的光谱非常复杂,需要用高分辨率光谱仪(<0.009nm)以克服光谱干扰问题。本文叙述了样品制备、方法研究及上述金属中三十多种元素的分析方法。测量所用的仪器为一快速顺序扫描ICP发射光谱仪。每种元素无干扰谱线的选择是在方法研究阶段通过把光谱显示在阴极射线管(CRT)上的办法完成的。校正曲线采用合成多元素标准制作。还在假定将1g固体金属溶于100ml溶液中的情况下,计算了某些被选用谱线按固体样品的ppm表示的检出限。
Analysis of trace components in W, Nb, Ta, Mo and V is one of the typical applications of ICP technology. Due to the very complex spectra of these elements, high-resolution spectroscopy (<0.009 nm) is required to overcome spectral interference issues. This article describes sample preparation, methodological studies, and analysis of more than thirty elements in the metals described above. The instrument used for the measurement was a rapid sequential scanning ICP emission spectrometer. The choice of non-interfering spectral lines for each element is accomplished by displaying the spectrum on a cathode ray tube (CRT) during the methodological study phase. Calibration curve using multi-element standard production. Assuming also that 1 g of the solid metal is dissolved in 100 ml of solution, the limit of detection of some of the selected lines, expressed in ppm of the solid sample, is calculated.