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本文评述 GsAs 金属-半导体功率场效应晶体管的技术发展水平,所涉及到的内容为:从材料和几何结构的角度讨论器件的工作原理、设计、制造程序、各实验室所采用的材料结构、从事这方面研究的人们所认为的那些对功率有重要影响的因素、器件的频率特性、单位栅宽的功率能力、从小到大数值栅宽的各种器件的变换以及电压效应。此外,还将简要地讨论 GaAs 场效应晶体管的电路应用。
This article reviews GsAs metal-semiconductor power field-effect transistor technology development level, the content involved: from the material and geometry point of view discusses the working principle of the device, design, manufacturing procedures, the laboratory used material structure, engaged in What people consider in this area are those factors that have a significant impact on power, the frequency characteristics of the device, the power capability per unit width of the gate, the variety of devices from small to large numerical gate width, and voltage effects. In addition, circuit applications of GaAs field-effect transistors will also be briefly discussed.