【摘 要】
：
伴随着离子束生物技术的广泛应用,国内许多单位开展了低能离子注入植物种子的实验研究.其中关于低能离子注入植物种子诱变的物理机理,集中在离子注入的深度-浓度分布上.一些
【机 构】
：
新疆师范大学物理系,新疆大学物理系
论文部分内容阅读
伴随着离子束生物技术的广泛应用,国内许多单位开展了低能离子注入植物种子的实验研究.其中关于低能离子注入植物种子诱变的物理机理,集中在离子注入的深度-浓度分布上.一些单位直接使用纵向非静态(LSS)理论和TRIM程序来计算低能离子注入植物种子的深度-浓度分布,却发现计算结果与实验测量结果相差甚远.所以在对植物种子靶材料进行处理和对LSS理论进行修正的基础上,在二维近似情况下,用蒙特卡罗方法分别模拟计算了200keV V+和20keV Ti+注入花生和棉花种子的射程分布,得到了与实验结果较符合的曲线.在此模型基础上,计算了同样初始条件和理论计算模型下无法从实验上测量的N+注入植物种子的射程分布,初步地为低能N+注入植物种子射程分布提供了一种理论计算方法.
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